IXFX180N10
제조 업체:
익시스
기술:
MOSFET N-CH 100V 180A PLUS247
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
390 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 90A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
패키지:
튜브
Drain to Source Voltage (Vdss):
100 V
브그스 (맥스):
±20V
Product Status:
Not For New Designs
Vds에 있는 입력 커패시턴스 (CIS) (맥스):
10900pF @ 25V
Mounting Type:
Through Hole
시리즈:
하이퍼펫텀
Supplier Device Package:
PLUS247™-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Power Dissipation (Max):
560W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX180
소개
N 채널 100V 180A (Tc) 560W (Tc) 구멍 PLUS247TM-3을 통해
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| 이미지 | 부분 # | 기술 | |
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IXFH13N50 |
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|
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