IXFN32N100Q3
제조 업체:
익시스
기술:
MOSFET N-CH 1000V 28A SOT227B
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs:
195 nC @ 10 V
Rds On (Max) @ Id, Vgs:
320mOhm @ 16A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9940 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Q3 Class
공급자의 장치 패키지:
SOT-227B
Mfr:
IXYS
전류 - 연속 드레인(Id) @ 25°C:
28A (Tc)
Power Dissipation (Max):
780W (Tc)
기술:
MOSFET (금속 산화물)
Base Product Number:
IXFN32
소개
N 채널 1000 V 28A (Tc) 780W (Tc) 차시 마운트 SOT-227B
관련 제품
IXFK120N20
MOSFET N-CH 200V 120A TO-264AA
IXFK27N80
MOSFET N-CH 800V 27A TO264AA
IXFH20N80Q
MOSFET N-CH 800V 20A TO247AD
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD
IXFH12N90
MOSFET N-CH 900V 12A TO247AD
IXFH13N50
MOSFET N-CH 500V 13A TO247AD
IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B
IXFN36N100
MOSFET N-CH 1KV 36A SOT-227B
IXFN38N100Q2
MOSFET N-CH 1000V 38A SOT-227
| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
|
|
|
IXFN38N100Q2 |
MOSFET N-CH 1000V 38A SOT-227
|
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