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IXFK27N80

제조 업체:
익시스
기술:
MOSFET N-CH 800V 27A TO264AA
범주:
분리된 반도체 제품
상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
400 nC @ 10 V
Rds On (Max) @ Id, Vgs:
300mOhm @ 13.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9740 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™
Supplier Device Package:
TO-264AA (IXFK)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Power Dissipation (Max):
500W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFK27
소개
N 채널 800V 27A (Tc) 500W (Tc) 구멍을 통해 TO-264AA (IXFK)
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