IXFN38N100Q2
제조 업체:
익시스
기술:
MOSFET N-CH 1000V 38A SOT-227
범주:
분리된 반도체 제품
상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Id에 있는 Vgs(th) (맥스):
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
패키지 / 케이스:
SOT-227-4, 미니브로크
Gate Charge (Qg) (Max) @ Vgs:
250 nC @ 10 V
Id, 브그스에 있는 (맥스) 위의 Rds:
250m옴 @ 19A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
7200 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Q2 Class
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
38A (Tc)
Power Dissipation (Max):
890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN38
소개
N 채널 1000 V 38A (Tc) 890W (Tc) 차시 마운트 SOT-227B
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
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|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
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|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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