IXTB30N100L
제조 업체:
익시스
기술:
MOSFET N-CH 1000V 30A PLUS264
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-264-3, TO-264AA
Gate Charge (Qg) (Max) @ Vgs:
545 nC @ 20 V
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
13200 pF @ 25 V
Mounting Type:
Through Hole
Series:
Linear
공급자의 장치 패키지:
PLUS264™
Mfr:
IXYS
전류 - 연속 드레인(Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
800W (Tc)
기술:
MOSFET (금속 산화물)
Base Product Number:
IXTB30
소개
N 채널 1000 V 30A (Tc) 800W (Tc) 구멍 PLUS264 TM를 통해
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
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|
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IXFH15N80 |
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IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
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IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
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|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
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IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
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|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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