IXFP4N85X
제조 업체:
익시스
기술:
MOSFET N-CH 850V 3.5A TO220AB
범주:
분리된 반도체 제품
상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Id에 있는 Vgs(th) (맥스):
250uA에 있는 5.5V
Operating Temperature:
-55°C ~ 150°C (TJ)
패키지 / 케이스:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 10 V
Id, 브그스에 있는 (맥스) 위의 Rds:
2.5옴 @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
247 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Ultra X
Supplier Device Package:
TO-220AB (IXFP)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFP4N85
소개
N 채널 850 V 3.5A (Tc) 150W (Tc) 구멍을 통해 TO-220AB (IXFP)
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
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|
IXFK27N80 |
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IXFH26N50Q |
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IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
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|
IXFN32N120P |
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IXFN32N100Q3 |
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|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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