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IXFH110N10P

제조 업체:
익시스
기술:
MOSFET N-CH 100V 110A TO247AD
범주:
분리된 반도체 제품
상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 4mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Rds On (Max) @ Id, Vgs:
15mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3550 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-247AD (IXFH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Power Dissipation (Max):
480W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH110
소개
N 채널 100 V 110A (Tc) 480W (Tc) 구멍을 통해 TO-247AD (IXFH)
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