IXTP110N055T2
제조 업체:
익시스
기술:
MOSFET N-CH 55V 110A TO220AB
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
57 nC @ 10 V
Rds On (Max) @ Id, Vgs:
6.6mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
소스 전압 (프즈스)에 고갈되세요:
55 Ｖ
Vgs (Max):
±20V
제품 상태:
액티브
Input Capacitance (Ciss) (Max) @ Vds:
3060 pF @ 25 V
장착형:
구멍을 통해
Series:
TrenchT2™
공급자의 장치 패키지:
TO-220-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Power Dissipation (Max):
180W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTP110
소개
N-채널 55 V 110A (Tc) 180W (Tc) 구멍을 통해 TO-220-3
Related Products
IXFK120N20
MOSFET N-CH 200V 120A TO-264AA
IXFK27N80
MOSFET N-CH 800V 27A TO264AA
IXFH20N80Q
MOSFET N-CH 800V 20A TO247AD
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD
IXFH12N90
MOSFET N-CH 900V 12A TO247AD
IXFH13N50
MOSFET N-CH 500V 13A TO247AD
IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B
IXFN32N100Q3
MOSFET N-CH 1000V 28A SOT227B
IXFN36N100
MOSFET N-CH 1KV 36A SOT-227B
| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
가격 요구를 보내세요
주식:
MOQ: