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IXFH80N65X2

제조 업체:
익시스
기술:
MOSFET N-CH 650V 80A TO247
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
143 nC @ 10 V
Rds On (Max) @ Id, Vgs:
40mOhm @ 40A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
패키지:
튜브
Drain to Source Voltage (Vdss):
650 V
브그스 (맥스):
±30V
Product Status:
Active
Vds에 있는 입력 커패시턴스 (CIS) (맥스):
25V에서 8245pF
Mounting Type:
Through Hole
시리즈:
HiPerFET™, 울트라 X2
Supplier Device Package:
TO-247 (IXTH)
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Power Dissipation (Max):
890W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH80
소개
N-채널 650 V 80A (Tc) 890W (Tc) 구멍을 통해 TO-247 (IXTH)
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