SIRA18DP-T1-GE3
제조 업체:
비샤이 실리코닉스
기술:
MOSFET N-CH 30V 33A PPAK SO-8
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
패키지 / 케이스:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
21.5 nC @ 10 V
Id, 브그스에 있는 (맥스) 위의 Rds:
7.5m옴 @ 10A, 10V
FET Type:
N-Channel
구동 전압 (Rds를에 민 Rds에 최대한으로 씁니다):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
소스 전압 (프즈스)에 고갈되세요:
30V
Vgs (Max):
+20V, -16V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1000 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Power Dissipation (Max):
3.3W (Ta), 14.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIRA18
소개
N 채널 30 V 33A (Tc) 3.3W (Ta), 14.7W (Tc) 표면 장착 PowerPAK® SO-8
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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