2N7002E-T1-E3
제조 업체:
비샤이 실리코닉스
기술:
MOSFET N-CH 60V 240MA SOT23-3
범주:
분리된 반도체 제품
상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Id에 있는 Vgs(th) (맥스):
250uA에 있는 2.5V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
3Ohm @ 250mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
21 pF @ 5 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
240mA (Ta)
Power Dissipation (Max):
350mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2N7002
소개
N 채널 60 V 240mA (Ta) 350mW (Ta) 표면 마운트 SOT-23-3 (TO-236)
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
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|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
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|
SI7157DP-T1-GE3 |
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|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
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|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
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|
|
|
SQSA12CENW-T1_GE3 |
AUTOMOTIVE N-CHANNEL 100 V (D-S)
|
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