문자 보내
> 상품 > 분리된 반도체 제품 > SQJA68EP-T1_GE3

SQJA68EP-T1_GE3

제조 업체:
비샤이 실리코닉스
기술:
MOSFET N-CH 100V 14A PPAK SO-8L
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8L
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 10 V
Rds On (Max) @ Id, Vgs:
92mOhm @ 4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
280 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® SO-8L
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Power Dissipation (Max):
45W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJA68
소개
N 채널 100 V 14A (Tc) 45W (Tc) 표면 장착 PowerPAK® SO-8L
가격 요구를 보내세요
주식:
MOQ: