IRFU420PBF
제조 업체:
비샤이 실리코닉스
기술:
MOSFET N-CH 500V 2.4A TO251AA
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3Ohm @ 1.4A, 10V
FET Type:
N-Channel
구동 전압 (Rds를에 민 Rds에 최대한으로 씁니다):
10V
Package:
Tube
소스 전압 (프즈스)에 고갈되세요:
500 Ｖ
Vgs (Max):
±20V
제품 상태:
액티브
Input Capacitance (Ciss) (Max) @ Vds:
360 pF @ 25 V
장착형:
구멍을 통해
Series:
-
Supplier Device Package:
TO-251AA
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
2.4A (Tc)
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFU420
소개
N 채널 500 V 2.4A (Tc) 2.5W (Ta), 42W (Tc) 구멍을 통해 TO-251AA
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
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|
|
|
SIR872ADP-T1-RE3 |
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|
SI7148DP-T1-E3 |
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|
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|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
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|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
SIR873DP-T1-GE3 |
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|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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