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IXFH18N100Q3

제조 업체:
익시스
기술:
MOSFET N-CH 1000V 18A TO247AD
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
Rds On (Max) @ Id, Vgs:
660mOhm @ 9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4890 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Q3 Class
Supplier Device Package:
TO-247AD (IXFH)
Mfr:
익시스
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
전력 소모 (맥스):
830W(Tc)
Technology:
MOSFET (Metal Oxide)
기본 제품 번호:
IXFH18
소개
N 채널 1000 V 18A (Tc) 830W (Tc) 구멍을 통해 TO-247AD (IXFH)
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