IRF640PBF
제조 업체:
비샤이 실리코닉스
기술:
MOSFET N-CH 200V 18A TO220AB
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
Rds On (Max) @ Id, Vgs:
180mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Product Status:
Active
Vds에 있는 입력 커패시턴스 (CIS) (맥스):
25 Ｖ에 있는 1300 pF
Mounting Type:
Through Hole
시리즈:
-
Supplier Device Package:
TO-220AB
Mfr:
비샤이 실리코닉스
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
전력 소모 (맥스):
125W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF640
소개
N 채널 200 V 18A (Tc) 125W (Tc) 구멍을 통해 TO-220AB
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
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|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
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|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
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|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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