IXFX64N60P3
제조 업체:
익시스
기술:
MOSFET N-CH 600V 64A PLUS247-3
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET 특징:
-
Vgs(th) (Max) @ Id:
5V @ 4mA
작동 온도:
-55' Ｃ ~ 150' Ｃ (TJ)
Package / Case:
TO-247-3 Variant
Gate Charge (Qg) (Max) @ Vgs:
145 nC @ 10 V
Rds On (Max) @ Id, Vgs:
95mOhm @ 32A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9900 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar3™
Supplier Device Package:
PLUS247™-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Power Dissipation (Max):
1130W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFX64
소개
N 채널 600V 64A (Tc) 1130W (Tc) 구멍 PLUS247TM-3을 통해
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| 이미지 | 부분 # | 기술 | |
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