IRFR9220TRPBF
제조 업체:
비샤이 실리코닉스
기술:
MOSFET P-CH 200V 3.6A DPAK
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 2.2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
제품 상태:
액티브
Input Capacitance (Ciss) (Max) @ Vds:
340 pF @ 25 V
장착형:
표면 마운트
Series:
-
공급자의 장치 패키지:
D-PAK
Mfr:
Vishay Siliconix
전류 - 연속 드레인(Id) @ 25°C:
3.6A(Tc)
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFR9220
소개
P 채널 200 V 3.6A (Tc) 2.5W (Ta), 42W (Tc) 표면 마운트 D-Pak
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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