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IXTN30N100L

제조 업체:
익시스
기술:
MOSFET N-CH 1000V 30A SOT227B
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs:
545 nC @ 20 V
Rds On (Max) @ Id, Vgs:
450mOhm @ 15A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Bulk
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
13700 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
Linear
Supplier Device Package:
SOT-227B
Mfr:
IXYS
전류 - 연속 드레인(Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
800W (Tc)
기술:
MOSFET (금속 산화물)
Base Product Number:
IXTN30
소개
N 채널 1000 V 30A (Tc) 800W (Tc) 차시 마운트 SOT-227B
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