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PMZB350UPE315

제조 업체:
넥스페리아 USA Inc.
기술:
MOSFET P-CH 20V 1A DFN1006B-3
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
950mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Gate Charge (Qg) (Max) @ Vgs:
1.9 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
450mOhm @ 300mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
127 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1006B-3
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Power Dissipation (Max):
360mW (Ta), 3.125W (Tc)
기술:
MOSFET (금속 산화물)
Base Product Number:
PMZB350
소개
P 채널 20 V 1A (Ta) 360mW (Ta), 3.125W (Tc) 표면 마운트 DFN1006B-3
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