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PSMN2R0-30PL,127

제조 업체:
넥스페리아 USA Inc.
기술:
MOSFET N-CH 30V 100A TO220AB
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET 특징:
-
Vgs(th) (Max) @ Id:
2.15V @ 1mA
작동 온도:
-55' C ~ 175' C (TJ)
Package / Case:
TO-220-3
게이트는 브그스에 (큐그에게) (맥스)를 청구합니다:
117nC @ 10V
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 15A, 10V
FET은 타이핑합니다:
엔-채널
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6810 pF @ 12 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
211W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN2R0
소개
N 채널 30 V 100A (Tc) 211W (Tc) 구멍을 통해 TO-220AB
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