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PSMN3R7-100BSEJ

제조 업체:
넥스페리아 USA Inc.
기술:
MOSFET N-CH 100V 120A D2PAK
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
246 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.95mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
16370 pF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
120A (Ta)
Power Dissipation (Max):
405W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN3R7
소개
N 채널 100V 120A (Ta) 405W (Ta) 표면 장착 D2PAK
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