IXTY1R6N50D2
제조 업체:
익시스
기술:
MOSFET N-CH 500V 1.6A TO252
범주:
분리된 반도체 제품
상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
Depletion Mode
Id에 있는 Vgs(th) (맥스):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
패키지 / 케이스:
TO-252-3, 드팩 (2개 리드 + 탭), SC-63
Gate Charge (Qg) (Max) @ Vgs:
23.7 nC @ 5 V
Rds On (Max) @ Id, Vgs:
2.3Ohm @ 800mA, 0V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
645 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Depletion
Supplier Device Package:
TO-252AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
1.6A (Tc)
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTY1
소개
N 채널 500 V 1.6A (Tc) 100W (Tc) 표면 마운트 TO-252AA
관련 제품
IXFK120N20
MOSFET N-CH 200V 120A TO-264AA
IXFK27N80
MOSFET N-CH 800V 27A TO264AA
IXFH20N80Q
MOSFET N-CH 800V 20A TO247AD
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD
IXFH12N90
MOSFET N-CH 900V 12A TO247AD
IXFH13N50
MOSFET N-CH 500V 13A TO247AD
IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B
IXFN32N100Q3
MOSFET N-CH 1000V 28A SOT227B
IXFN36N100
MOSFET N-CH 1KV 36A SOT-227B
| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
IXFK120N20 |
MOSFET N-CH 200V 120A TO-264AA
|
|
|
|
IXFK27N80 |
MOSFET N-CH 800V 27A TO264AA
|
|
|
|
IXFH20N80Q |
MOSFET N-CH 800V 20A TO247AD
|
|
|
|
IXFH15N80 |
MOSFET N-CH 800V 15A TO247AD
|
|
|
|
IXFH26N50Q |
MOSFET N-CH 500V 26A TO247AD
|
|
|
|
IXFH12N90 |
MOSFET N-CH 900V 12A TO247AD
|
|
|
|
IXFH13N50 |
MOSFET N-CH 500V 13A TO247AD
|
|
|
|
IXFN32N120P |
MOSFET N-CH 1200V 32A SOT-227B
|
|
|
|
IXFN32N100Q3 |
MOSFET N-CH 1000V 28A SOT227B
|
|
|
|
IXFN36N100 |
MOSFET N-CH 1KV 36A SOT-227B
|
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