PSMN1R0-30YLDX
제조 업체:
넥스페리아 USA Inc.
기술:
MOSFET N-CH 30V 100A LFPAK56
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Id에 있는 Vgs(th) (맥스):
2.2V @ 2mA
Operating Temperature:
-55°C ~ 175°C (TJ)
패키지 / 케이스:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
121.35 nC @ 10 V
Id, 브그스에 있는 (맥스) 위의 Rds:
1.02m옴 @ 25A, 10V
FET Type:
N-Channel
구동 전압 (Rds를에 민 Rds에 최대한으로 씁니다):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8598 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
238W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN1R0
소개
N 채널 30 V 100A (Tc) 238W (Tc) 표면 장착 LFPAK56, 전력-SO8
관련 제품
BUK7Y22-100EX
MOSFET N-CH 100V 49A LFPAK56
PMV27UPEAR
MOSFET P-CH 20V 4.5A TO236AB
PSMN8R7-100YSFX
PSMN8R7-100YSF/SOT669/LFPAK
BUK7Y7R6-40EX
MOSFET N-CH 40V 79A LFPAK56
BUK9M120-100EX
MOSFET N-CH 100V 11.5A LFPAK33
PSMN3R7-100BSEJ
MOSFET N-CH 100V 120A D2PAK
PSMN2R0-30PL,127
MOSFET N-CH 30V 100A TO220AB
BUK7Y7R0-40HX
MOSFET N-CH 40V 68A LFPAK56
BUK7M10-40EX
MOSFET N-CH 40V 56A LFPAK33
BUK9Y65-100E115
MOSFET N-CH 100V 19A LFPAK56
| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
BUK7Y22-100EX |
MOSFET N-CH 100V 49A LFPAK56
|
|
|
|
PMV27UPEAR |
MOSFET P-CH 20V 4.5A TO236AB
|
|
|
|
PSMN8R7-100YSFX |
PSMN8R7-100YSF/SOT669/LFPAK
|
|
|
|
BUK7Y7R6-40EX |
MOSFET N-CH 40V 79A LFPAK56
|
|
|
|
BUK9M120-100EX |
MOSFET N-CH 100V 11.5A LFPAK33
|
|
|
|
PSMN3R7-100BSEJ |
MOSFET N-CH 100V 120A D2PAK
|
|
|
|
PSMN2R0-30PL,127 |
MOSFET N-CH 30V 100A TO220AB
|
|
|
|
BUK7Y7R0-40HX |
MOSFET N-CH 40V 68A LFPAK56
|
|
|
|
BUK7M10-40EX |
MOSFET N-CH 40V 56A LFPAK33
|
|
|
|
BUK9Y65-100E115 |
MOSFET N-CH 100V 19A LFPAK56
|
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