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BSH111BKR

제조 업체:
넥스페리아 USA Inc.
기술:
MOSFET N-CH 55V 210MA TO236AB
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.5 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
4Ohm @ 200mA, 4.5V
FET은 타이핑합니다:
엔-채널
Drive Voltage (Max Rds On, Min Rds On):
4.5V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
30 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-236AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
210mA (Ta)
Power Dissipation (Max):
302mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSH111
소개
N 채널 55 V 210mA (Ta) 302mW (Ta) 표면 장착 TO-236AB
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