SIA427DJ-T1-GE3
제조 업체:
비샤이 실리코닉스
기술:
MOSFET P-CH 8V 12A PPAK SC70-6
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
800mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SC-70-6
Gate Charge (Qg) (Max) @ Vgs:
50 nC @ 5 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 8.2A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
8 V
Vgs (Max):
±5V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2300 pF @ 4 V
장착형:
표면 마운트
Series:
TrenchFET®
공급자의 장치 패키지:
PowerPAK® SC-70-6
Mfr:
Vishay Siliconix
전류 - 연속 드레인(Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
3.5W (Ta), 19W (Tc)
기술:
MOSFET (금속 산화물)
Base Product Number:
SIA427
소개
P 채널 8V 12A (Tc) 3.5W (Ta), 19W (Tc) 표면 장착 PowerPAK® SC-70-6
관련 제품
2N7002E-T1-E3
MOSFET N-CH 60V 240MA SOT23-3
SIR872ADP-T1-RE3
MOSFET N-CH 150V 53.7A PPAK SO-8
SI7148DP-T1-E3
MOSFET N-CH 75V 28A PPAK SO-8
SI7157DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
IRFP21N60LPBF
MOSFET N-CH 600V 21A TO247-3
SIR880ADP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8
SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8
SIJ478DP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8
SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 14A/50A TO252
SISA72DN-T1-GE3
MOSFET N-CH 40V 60A PPAK1212-8
| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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