BSS84AK215

제조 업체:
넥스페리아 USA Inc.
기술:
MOSFET P-CH 50V 180MA TO236AB
범주:
분리된 반도체 제품
상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.35 nC @ 5 V
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 100mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
36 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
TO-236AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
180mA (Ta)
Power Dissipation (Max):
350mW (Ta), 1.14W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSS84
소개
P 채널 50V 180mA (Ta) 350mW (Ta), 1.14W (Tc) 표면 마운트 TO-236AB
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