PMV45EN2R

제조 업체:
넥스페리아 USA Inc.
기술:
MOSFET N-CH 30V 4.1A TO236AB
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
6.3 nC @ 10 V
Id, 브그스에 있는 (맥스) 위의 Rds:
42m옴 @ 4.1A, 10V
FET Type:
N-Channel
구동 전압 (Rds를에 민 Rds에 최대한으로 씁니다):
4.5V, 10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
소스 전압 (프즈스)에 고갈되세요:
30V
Vgs (Max):
±20V
제품 상태:
액티브
Input Capacitance (Ciss) (Max) @ Vds:
209 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-236AB
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
4.1A (Ta)
Power Dissipation (Max):
510mW (Ta), 5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMV45EN2
소개
N 채널 30 V 4.1A (Ta) 510mW (Ta), 5W (Tc) 표면 장착 TO-236AB
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