SI2301BDS-T1-E3
제조 업체:
비샤이 실리코닉스
기술:
MOSFET P-CH 20V 2.2A SOT23-3
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
950mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.8A, 4.5V
FET Type:
P-Channel
구동 전압 (Rds를에 민 Rds에 최대한으로 씁니다):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
소스 전압 (프즈스)에 고갈되세요:
20 Ｖ
Vgs (Max):
±8V
제품 상태:
액티브
Input Capacitance (Ciss) (Max) @ Vds:
375 pF @ 6 V
장착형:
표면 마운트
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Power Dissipation (Max):
700mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2301
소개
P 채널 20 V 2.2A (Ta) 700mW (Ta) 표면 마운트 SOT-23-3 (TO-236)
관련 제품
2N7002E-T1-E3
MOSFET N-CH 60V 240MA SOT23-3
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MOSFET N-CH 150V 53.7A PPAK SO-8
SI7148DP-T1-E3
MOSFET N-CH 75V 28A PPAK SO-8
SI7157DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
IRFP21N60LPBF
MOSFET N-CH 600V 21A TO247-3
SIR880ADP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8
SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8
SIJ478DP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8
SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 14A/50A TO252
SISA72DN-T1-GE3
MOSFET N-CH 40V 60A PPAK1212-8
| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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