SQM120P10_10M1LGE3
제조 업체:
비샤이 실리코닉스
기술:
MOSFET P-CH 100V 120A TO263
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
게이트는 브그스에 (큐그에게) (맥스)를 청구합니다:
10 Ｖ에 있는 190 nC
Rds On (Max) @ Id, Vgs:
10.1mOhm @ 30A, 10V
FET은 타이핑합니다:
P-채널
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
패키지:
테이프 & 롤 (TR)
절단 테이프 (CT)
디기 릴®
Drain to Source Voltage (Vdss):
100 V
브그스 (맥스):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9000 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
TO-263 (D²Pak)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
375W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQM120
소개
P 채널 100 V 120A (Tc) 375W (Tc) 표면 마운트 TO-263 (D2Pak)
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
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2N7002E-T1-E3 |
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|
SIR872ADP-T1-RE3 |
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SI7148DP-T1-E3 |
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SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
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IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
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SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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SIR873DP-T1-GE3 |
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|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
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SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
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|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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