문자 보내
> 상품 > 분리된 반도체 제품 > PSMN1R5-40YSDX

PSMN1R5-40YSDX

제조 업체:
넥스페리아 USA Inc.
기술:
MOSFET N-CH 40V 240A LFPAK56
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
Schottky Diode (Body)
Vgs(th) (Max) @ Id:
3.6V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
99 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.5mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7752 pF @ 20 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
240A (Ta)
Power Dissipation (Max):
238W (Ta)
Technology:
MOSFET (Metal Oxide)
기본 제품 번호:
PSMN1R5
소개
N 채널 40 V 240A (Ta) 238W (Ta) 표면 마운트 LFPAK56, 파워-SO8
가격 요구를 보내세요
주식:
MOQ: