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IXFN80N50Q3

제조 업체:
익시스
기술:
MOSFET N-CH 500V 63A SOT227B
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
6.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Gate Charge (Qg) (Max) @ Vgs:
200 nC @ 10 V
Rds On (Max) @ Id, Vgs:
65mOhm @ 40A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
10000 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Q3 Class
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
63A (Tc)
Power Dissipation (Max):
780W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN80
소개
N 채널 500 V 63A (Tc) 780W (Tc) 차시 마운트 SOT-227B
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