IRF9510PBF
제조 업체:
비샤이 실리코닉스
기술:
MOSFET P-CH 100V 4A TO220AB
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
게이트는 브그스에 (큐그에게) (맥스)를 청구합니다:
8.7nC @ 10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2.4A, 10V
FET은 타이핑합니다:
P-채널
Drive Voltage (Max Rds On, Min Rds On):
10V
패키지:
튜브
Drain to Source Voltage (Vdss):
100 V
브그스 (맥스):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
200 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Power Dissipation (Max):
43W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF9510
소개
P 채널 100 V 4A (Tc) 43W (Tc) 구멍을 통해 TO-220AB
관련 제품
2N7002E-T1-E3
MOSFET N-CH 60V 240MA SOT23-3
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MOSFET N-CH 150V 53.7A PPAK SO-8
SI7148DP-T1-E3
MOSFET N-CH 75V 28A PPAK SO-8
SI7157DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
IRFP21N60LPBF
MOSFET N-CH 600V 21A TO247-3
SIR880ADP-T1-GE3
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SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8
SIJ478DP-T1-GE3
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SUD50N04-8M8P-4GE3
MOSFET N-CH 40V 14A/50A TO252
SISA72DN-T1-GE3
MOSFET N-CH 40V 60A PPAK1212-8
| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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