SISA14DN-T1-GE3
제조 업체:
비샤이 실리코닉스
기술:
MOSFET N-CH 30V 20A PPAK1212-8
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
Rds On (Max) @ Id, Vgs:
5.1mOhm @ 10A, 10V
FET은 타이핑합니다:
엔-채널
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
패키지:
테이프 & 롤 (TR)
절단 테이프 (CT)
디기 릴®
Drain to Source Voltage (Vdss):
30 V
브그스 (맥스):
+20V, -16V
Product Status:
Active
Vds에 있는 입력 커패시턴스 (CIS) (맥스):
15V에서 1450pF
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Power Dissipation (Max):
3.57W (Ta), 26.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISA14
소개
N 채널 30 V 20A (Tc) 3.57W (Ta), 26.5W (Tc) 표면 장착 PowerPAK® 1212-8
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| 이미지 | 부분 # | 기술 | |
|---|---|---|---|
|
|
2N7002E-T1-E3 |
MOSFET N-CH 60V 240MA SOT23-3
|
|
|
|
SIR872ADP-T1-RE3 |
MOSFET N-CH 150V 53.7A PPAK SO-8
|
|
|
|
SI7148DP-T1-E3 |
MOSFET N-CH 75V 28A PPAK SO-8
|
|
|
|
SI7157DP-T1-GE3 |
MOSFET P-CH 20V 60A PPAK SO-8
|
|
|
|
IRFP21N60LPBF |
MOSFET N-CH 600V 21A TO247-3
|
|
|
|
SIR880ADP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SIR873DP-T1-GE3 |
MOSFET P-CH 150V 37A PPAK SO-8
|
|
|
|
SIJ478DP-T1-GE3 |
MOSFET N-CH 80V 60A PPAK SO-8
|
|
|
|
SUD50N04-8M8P-4GE3 |
MOSFET N-CH 40V 14A/50A TO252
|
|
|
|
SISA72DN-T1-GE3 |
MOSFET N-CH 40V 60A PPAK1212-8
|
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