FCP190N60E
제조 업체:
1개
기술:
MOSFET N-CH 600V 20.6A TO220-3
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
82 nC @ 10 V
Rds On (Max) @ Id, Vgs:
190mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
브그스 (맥스):
±20V
Product Status:
Not For New Designs
Vds에 있는 입력 커패시턴스 (CIS) (맥스):
3175pF @ 25V
Mounting Type:
Through Hole
시리즈:
SuperFET® II
Supplier Device Package:
TO-220-3
Mfr:
1개
Current - Continuous Drain (Id) @ 25°C:
20.6A (Tc)
Power Dissipation (Max):
208W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCP190
소개
N 채널 600 V 20.6A (Tc) 208W (Tc) 구멍을 통해 TO-220-3
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