FQA19N60
제조 업체:
1개
기술:
POWER FIELD-EFFECT TRANSISTOR, 1
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
제품 상태:
액티브
Mounting Type:
Through Hole
패키지:
대용품
Input Capacitance (Ciss) (Max) @ Vds:
3600 pF @ 25 V
시리즈:
-
Vgs (Max):
±30V
Id에 있는 Vgs(th) (맥스):
250uA에 있는 5V
Supplier Device Package:
TO-3PN
Rds On (Max) @ Id, Vgs:
380mOhm @ 9.3A, 10V
Mfr:
onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
300W (Tc)
Package / Case:
TO-3P-3, SC-65-3
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
18.5A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
소개
N 채널 600 V 18.5A (Tc) 300W (Tc) 구멍을 통해 TO-3PN
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주식:
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