NP32N055SLE-E1-AY
제조 업체:
르네사스
기술:
NP32N055 - POWER FIELD-EFFECT TR
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
TO-252 (MP-3ZK)
Rds On (Max) @ Id, Vgs:
24mOhm @ 16A, 10V
Mfr:
Renesas
Operating Temperature:
175°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.2W (Ta), 66W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
32A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
소개
N 채널 55 V 32A (Ta) 1.2W (Ta), 66W (Tc) 표면 마운트 TO-252 (MP-3ZK)
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