FCP36N60N
제조 업체:
1개
기술:
POWER MOSFET, N-CHANNEL, SUPREMO
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
112 nC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
4785 pF @ 100 V
Series:
SupreMOS™
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-220-3
Rds On (Max) @ Id, Vgs:
90mOhm @ 18A, 10V
Mfr:
onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
312W (Tc)
패키지 / 케이스:
TO-220-3
Drain to Source Voltage (Vdss):
600 V
전류 - 연속 드레인(Id) @ 25°C:
36A (Tc)
Technology:
MOSFET (Metal Oxide)
FET 특징:
-
소개
N 채널 600 V 36A (Tc) 312W (Tc) 구멍을 통해 TO-220-3
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주식:
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