FCA20N60
제조 업체:
1개
기술:
MOSFET N-CH 600V 20A TO3PN
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
98 nC @ 10 V
Id, 브그스에 있는 (맥스) 위의 Rds:
190m옴 @ 10A, 10V
FET은 타이핑합니다:
엔-채널
Drive Voltage (Max Rds On, Min Rds On):
10V
패키지:
튜브
Drain to Source Voltage (Vdss):
600 V
브그스 (맥스):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
3080 pF @ 25 V
Mounting Type:
Through Hole
Series:
SuperFET™
Supplier Device Package:
TO-3PN
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Power Dissipation (Max):
208W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCA20
소개
N 채널 600 V 20A (Tc) 208W (Tc) 구멍을 통해 TO-3PN
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주식:
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