FQA30N40
제조 업체:
1개
기술:
MOSFET N-CH 400V 30A TO3PN
범주:
분리된 반도체 제품
상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
작동 온도:
-55' Ｃ ~ 150' Ｃ (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
120 nC @ 10 V
Rds On (Max) @ Id, Vgs:
140mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
400 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
4400 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3PN
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
290W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQA30
소개
N 채널 400 V 30A (Tc) 290W (Tc) 구멍을 통해 TO-3PN
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