FDMS0312S
제조 업체:
1개
기술:
MOSFET N-CH 30V 19A/42A 8PQFN
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
46 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.9mOhm @ 18A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
패키지:
테이프 & 롤 (TR)
절단 테이프 (CT)
디기 릴®
Drain to Source Voltage (Vdss):
30 V
브그스 (맥스):
±20V
Product Status:
Active
Vds에 있는 입력 커패시턴스 (CIS) (맥스):
2820pF @ 15V
Mounting Type:
Surface Mount
시리즈:
PowerTrench®, 싱크펫텀
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 42A (Tc)
Power Dissipation (Max):
2.5W (Ta), 46W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS0312
소개
N 채널 30 V 19A (Ta), 42A (Tc) 2.5W (Ta), 46W (Tc) 표면 장착 8-PQFN (5x6)
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