FQA8N100C
제조 업체:
1개
기술:
MOSFET N-CH 1000V 8A TO3PN
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET 특징:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
작동 온도:
-55' Ｃ ~ 150' Ｃ (TJ)
Package / Case:
TO-3P-3, SC-65-3
게이트는 브그스에 (큐그에게) (맥스)를 청구합니다:
10 Ｖ에 있는 70 nC
Rds On (Max) @ Id, Vgs:
1.45Ohm @ 4A, 10V
FET은 타이핑합니다:
엔-채널
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3220 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-3PN
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
225W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQA8
소개
N 채널 1000 V 8A (Tc) 225W (Tc) 구멍을 통해 TO-3PN
가격 요구를 보내세요
주식:
MOQ: