상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Id에 있는 Vgs(th) (맥스):
250uA에 있는 5V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 10 V
Rds On (Max) @ Id, Vgs:
41mOhm @ 34.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4640 pF @ 25 V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-3PN
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
69A (Tc)
Power Dissipation (Max):
480W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDA69
소개
N 채널 250V 69A (Tc) 480W (Tc) 구멍을 통해 TO-3PN
가격 요구를 보내세요
주식:
MOQ: