FDC658AP
제조 업체:
1개
기술:
MOSFET P-CH 30V 4A SUPERSOT6
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
8.1 nC @ 5 V
Rds On (Max) @ Id, Vgs:
50mOhm @ 4A, 10V
FET은 타이핑합니다:
P-채널
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
패키지:
테이프 & 롤 (TR)
절단 테이프 (CT)
디기 릴®
Drain to Source Voltage (Vdss):
30 V
브그스 (맥스):
±25V
Product Status:
Active
Vds에 있는 입력 커패시턴스 (CIS) (맥스):
470pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC658
소개
P 채널 30 V 4A (Ta) 1.6W (Ta) 표면 장착 SuperSOTTM-6
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