상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Id에 있는 Vgs(th) (맥스):
1.4V @ 26μA
Operating Temperature:
-55°C ~ 150°C (TJ)
패키지 / 케이스:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
1.4 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 230mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
41 pF @ 25 V
Mounting Type:
Surface Mount
Series:
SIPMOS®
Supplier Device Package:
PG-SOT23
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
230mA (Ta)
Power Dissipation (Max):
360mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSS138
소개
N 채널 60V 230mA (Ta) 360mW (Ta) 표면 장착 PG-SOT23
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