FDMS86101
제조 업체:
1개
기술:
MOSFET N-CH 100V 12.4A/60A 8PQFN
범주:
분리된 반도체 제품
상술
분류:
개별 반도체 제품 트랜지스터 FET, MOSFET 단일 FET, MOSFET
FET Feature:
-
Id에 있는 Vgs(th) (맥스):
250uA에 있는 4V
Operating Temperature:
-55°C ~ 150°C (TJ)
패키지 / 케이스:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 13A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3000 pF @ 50 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
12.4A (Ta), 60A (Tc)
Power Dissipation (Max):
2.5W (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86
소개
N 채널 100 V 12.4A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) 표면 장착 8-PQFN (5x6)
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주식:
MOQ: