FQPF3N80C
제조 업체:
1개
기술:
MOSFET N-CH 800V 3A TO220F
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.8Ohm @ 1.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
705 pF @ 25 V
Mounting Type:
Through Hole
시리즈:
QFET®
Supplier Device Package:
TO-220F-3
Mfr:
1개
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
전력 소모 (맥스):
39W(Tc)
Technology:
MOSFET (Metal Oxide)
기본 제품 번호:
FQPF3
소개
N 채널 800 V 3A (Tc) 39W (Tc) 구멍을 통해 TO-220F-3
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