상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.7V @ 150µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
210 nC @ 10 V
Rds On (Max) @ Id, Vgs:
3.3mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
브그스 (맥스):
±20V
Product Status:
Active
Vds에 있는 입력 커패시턴스 (CIS) (맥스):
25V에서 7020pF
Mounting Type:
Through Hole
시리즈:
HEXFET®, 스트롱르펫텀
Supplier Device Package:
TO-220AB
Mfr:
인피니온 테크놀로지
Current - Continuous Drain (Id) @ 25°C:
173A (Tc)
Power Dissipation (Max):
230W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFB7537
소개
N 채널 60 V 173A (Tc) 230W (Tc) 구멍을 통해 TO-220AB
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