IRLB8314PBF
제조 업체:
인피니온 테크놀로지
기술:
MOSFET N-CH 30V 171A TO220-3
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 100µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
게이트는 브그스에 (큐그에게) (맥스)를 청구합니다:
60nC @ 4.5V
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 68A, 10V
FET은 타이핑합니다:
엔-채널
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
패키지:
튜브
Drain to Source Voltage (Vdss):
30 V
브그스 (맥스):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5050 pF @ 15 V
Mounting Type:
Through Hole
Series:
HEXFET®
Supplier Device Package:
TO-220-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
171A (Tc)
Power Dissipation (Max):
125W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRLB8314
소개
N 채널 30 V 171A (Tc) 125W (Tc) 구멍을 통해 TO-220-3
가격 요구를 보내세요
주식:
MOQ: