FCPF11N60NT
제조 업체:
1개
기술:
MOSFET N-CH 600V 10.8A TO220F
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
35.6 nC @ 10 V
Rds On (Max) @ Id, Vgs:
299mOhm @ 5.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
제품 상태:
구식
Input Capacitance (Ciss) (Max) @ Vds:
1505 pF @ 100 V
장착형:
구멍을 통해
Series:
SuperMOS™
공급자의 장치 패키지:
TO-220F-3
Mfr:
onsemi
전류 - 연속 드레인(Id) @ 25°C:
10.8A(Tc)
Power Dissipation (Max):
32.1W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCPF11
소개
N 채널 600 V 10.8A (Tc) 32.1W (Tc) 구멍을 통해 TO-220F-3
가격 요구를 보내세요
주식:
MOQ:
