FDC658P
제조 업체:
1개
기술:
MOSFET P-CH 30V 4A SUPERSOT6
범주:
분리된 반도체 제품
상술
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 5 V
Rds On (Max) @ Id, Vgs:
50mOhm @ 4A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Vds에 있는 입력 커패시턴스 (CIS) (맥스):
15V에서 750pF
Mounting Type:
Surface Mount
시리즈:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Mfr:
1개
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
전력 소모 (맥스):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC658
소개
P 채널 30 V 4A (Ta) 1.6W (Ta) 표면 장착 SuperSOTTM-6
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